Triple‐crystal x‐ray diffraction analysis of reactive ion etched gallium arsenide
نویسندگان
چکیده
منابع مشابه
Applications of X-ray Diffraction in the Imaging Industry
X-ray diffraction characterization of materials used in traditional silver halide and digital semiconductor photographic systems is described. Silver halide grains precipitated as multicomponent AgBr1-xIx phases were found to be comprised of a core with three shells. The composition of the core and shells was determined using lattice constant measurements. Nanocomposites for photographic antist...
متن کاملDirect measurements of multi-photon induced nonlinear lattice dynamics in semiconductors via time-resolved x-ray scattering
Nonlinear optical phenomena in semiconductors present several fundamental problems in modern optics that are of great importance for the development of optoelectronic devices. In particular, the details of photo-induced lattice dynamics at early time-scales prior to carrier recombination remain poorly understood. We demonstrate the first integrated measurements of both optical and structural, m...
متن کاملSensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors
A special case of the x-ray multiple diffraction phenomenon, the Bragg surface diffraction ~BSD!, has been investigated under lattice damage due to ion implantation in GaAs ~001! samples. The BSD profile is very sensitive to the diffraction regime ~dynamical or kinematical! and provides information regarding crystalline perfection and lattice strains in both directions—parallel and perpendicula...
متن کاملDynamical x-ray reflection at terraces in epitaxial layers
Terrace formation in semiconductor epitaxial layers has been postulated to cause lattice bending, which ought to be observable by x-ray diffraction. Consideration of dynamical effects of x-ray reflection, both at the terraces and from a distorted crystal lattice, shows that diffraction effects by far outweigh the effects oflattice bending. For a given liquid phase epitaxial GaAs layer on a GaAs...
متن کاملX-ray Scattering from Self-Assembled InAs Islands
In this work several structural and chemical properties of self-assembled InAs islands grown on GaAs(001) are studied using surface x-ray scattering with synchrotron radiation. The technique of x-ray diffraction under grazing incidence condition was employed to differentiate coherent and incoherent islands. We used a model of a strained pyramidal island to interpret the x-ray results and correl...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015